IRFP250 N-Channel Power MOSFET

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Detail Description

The IRFP250 is a robust N-channel power MOSFET designed for high-efficiency switching applications. With its low on-resistance and high voltage capability, it is well-suited for use in power supplies, motor drivers, and various high-power applications. Its excellent thermal performance makes it a reliable choice for demanding environments.

Key Features

N-Channel Configuration: Suitable for high-side and low-side switching in various circuits.
Low On-Resistance (R_DS(on)): Approximately 0.08Ω, minimizing conduction losses and heat generation.
High Voltage Rating: Can handle a maximum drain-source voltage of 250V, allowing for use in high-voltage applications.
High Current Capacity: Supports continuous drain currents up to 33A, making it effective for driving substantial loads.
Fast Switching Capability: Optimized for quick switching applications, ideal for PWM and other high-frequency operations.

Specifications

Type: N-Channel MOSFET
Maximum Drain-Source Voltage (V_DS): 250V
Continuous Drain Current (I_D): 33A
Gate Threshold Voltage (V_GS(th)): 2V to 4V
On-Resistance (R_DS(on)): Typically 0.08Ω
Package Type: TO-220
Operating Temperature Range: -55°C to +175°C

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