The 20R1203 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for efficient switching in high-power applications. Manufactured by Infineon Technologies, this component integrates a monolithic body diode optimized for soft commutation, making it particularly suitable for resonant switching applications.

Key Features and Specifications

• Collector-Emitter Voltage (V_CE): 1200 V
• Continuous Collector Current (I_C): 20 A at 100°C
• Pulsed Collector Current (I_C, pulse): 60 A
• Collector-Emitter Saturation Voltage (V_CE(sat)): 1.48 V at 25°C
• Gate-Emitter Threshold Voltage (V_GE(th)): 5.1 V to 6.4 V
• Total Power Dissipation (P_tot): 310 W at 25°C
• Operating Junction Temperature (T_vj): -40°C to 175°C

These specifications highlight the 20R1203's capability to handle substantial voltages and currents, making it ideal for demanding power electronics applications.

Applications

The 20R1203 IGBT is commonly employed in applications such as:

• Induction Heating: Utilized in induction cookers and industrial heating systems due to its efficient high-frequency switching capabilities.
• Inverterized Microwave Ovens: Provides reliable switching performance in modern microwave ovens with inverter technology.
• Resonant Converters: Ideal for resonant power supply designs, benefiting from its low switching losses and soft commutation features.
• Soft Switching Applications: Enhances efficiency in circuits where voltage and current waveforms overlap, reducing electromagnetic interference (EMI).
  

Technological Advantages

The 20R1203 incorporates Infineon's TRENCHSTOP™ technology, which offers several benefits:

• Tight Parameter Distribution: Ensures consistent performance across devices, facilitating easier design and implementation.
• High Ruggedness and Temperature Stability: Maintains reliable operation under varying thermal conditions, essential for industrial applications.
• Low V_CE(sat): Reduces conduction losses, improving overall system efficiency.
• Ease of Parallel Switching: Positive temperature coefficient in V_CE(sat) allows for straightforward parallel operation, enabling scalability in power systems.
  

Package Information

The 20R1203 is housed in a PG-TO247-3 package, which provides:

• Enhanced Thermal Management: The package design facilitates efficient heat dissipation, crucial for high-power applications.
• Robust Mechanical Stability: Ensures durability and reliability in demanding operational environments.

Availability

The 20R1203 IGBT is available through various electronic component distributors and online marketplaces. For instance, platforms like Mr Arduino offer this component for purchase, catering to both individual and bulk requirements.

Conclusion

In summary, the 20R1203 IGBT by Infineon Technologies stands out as a robust and efficient solution for high-power switching applications. Its advanced features, combined with technological innovations, make it a preferred choice in industries ranging from consumer electronics to industrial power systems.